Factory Lead Time  

26 Weeks

Mount  

Surface Mount

Mounting Type  

Surface Mount

Package / Case  

DirectFET™ Isometric SQ

Number of Pins  

5

Transistor Element Material  

SILICON

Number of Elements  

1

Current - Continuous Drain (Id) @ 25℃  

19A Ta 84A Tc

Drive Voltage (Max Rds On, Min Rds On)  

4.5V 10V

Power Dissipation (Max)  

2.2W Ta 42W Tc

Turn Off Delay Time  

7.1 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

2.35V @ 25μA

Operating Temperature  

-40°C~150°C TJ

Packaging  

Tape & Reel (TR)

Series  

HEXFET®

Published  

2009

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

4

ECCN Code  

EAR99

Terminal Position  

BOTTOM

JESD-30 Code  

R-XBCC-N4

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

42W

Case Connection  

DRAIN

Turn On Delay Time  

7.7 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

3.8m Ω @ 19A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1810pF @ 13V

Gate Charge (Qg) (Max) @ Vgs  

20nC @ 4.5V

Rise Time  

13ns

Vgs (Max)  

±20V

Fall Time (Typ)  

5.4 ns

Continuous Drain Current (ID)  

19A

Gate to Source Voltage (Vgs)  

20V

Drain Current-Max (Abs) (ID)  

84A

Drain-source On Resistance-Max  

0.0038Ohm

Drain to Source Breakdown Voltage  

25V

Avalanche Energy Rating (Eas)  

62 mJ

Height  

506μm

Length  

4.826mm

Width  

3.95mm

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant